CJ3134K KF

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS CJ3134K N-Channel MOSFET V(BR)DSS ID RDS(on)MAX   20 V SOT-723 380mΩ@ 4.5V  450mΩ@ 2.5V  0.75A 800mΩ@1.8V   1. GATE 2. SOURCE 3. DRAIN FEATURES z Lead Free Product is Acquired z Surface Mount Package z N-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive MARKING APPLICATION z Load/Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics z Logic Level Shift Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Value Unit Drain-Source Voltage Parameter Symbol VDS 20 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID 0.75 A Pulsed Drain Current IDM 1.8 A PD 150 mW RθJA 833 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ (tp=10μs) Power Dissipation (note 1) Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8” from case for 10 s) ,2013 www.cj-elec.com 1 E,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±20 µA VGS(th) VDS =VGS, ID =250µA 0.54 1.1 V VGS =4.5V, ID =0.65A 270 380 mΩ VGS =2.5V, ID =0.55A 320 450 mΩ VGS =1.8V, ID =0.45A 390 800 mΩ 1.6 Drain-source breakdown voltage Gate threshold voltage (note 2) Drain-source on-resistance (note 2) RDS (on) Forward transconductance (note 2) gFS VDS =10V, ID =0.8A Diode forward voltage VSD IS=0.15A, VGS = 0V 20 0.35 V S 1.2 V 79 120 pF 13 20 pF 15 pF DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 9 td(on) 6.7 ns VGS=4.5V,VDS=10V, 4.8 ns ID =500mA,RGEN=10Ω 17.3 ns 7.4 ns VDS =16V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 4) Turn-on delay time (note 3) Turn-on rise time (note 3) tr Turn-off delay time (note3) td(off) Turn-off fall time (note 3) tf Notes : 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. B Dec,2013 www.cj-elec.com 2 E,Aug,2015 Typical Characteristics Output Characteristics Transfer Characteristics 5.0 4.5 4.0 VGS=4V,5V Ta=25℃ VDS=3V VGS=3V 3.5 VGS=2.5V 3.0 Pulsed Pulsed (A) ID 3.5 3.0 DRAIN CURRENT DRAIN CURRENT ID (A) 4.0 VGS=2V 2.5 2.0 1.5 Ta=25℃ 2.5 Ta=100℃ 2.0 1.5 1.0 VGS=1.5V 1.0 0.5 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE 4.0 VDS 4.5 5.0 0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 VGS 4 (V) RDS(ON) —— VGS RDS(ON) —— ID 500 800 Ta=25℃ Pulsed Pulsed 700 (m) 400 350 VGS=2.5V 300 VGS=4.5V 500 250 200 0.1 ID=0.65A 600 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) VGS=1.8V RDS(ON) 450 Ta=100℃ 400 300 Ta=25℃ 200 100 0.2 0.3 0.4 0.5 0.6 0.7 DRAIN CURRENT 0.8 ID 0.9 1.0 1.1 1.2 1 (A) 2 3 GATE TO SOURCE VOLTAGE 4 VGS 5 (V) Threshold Voltage IS —— VSD 2 0.8 Pulsed 1 VTH Ta=100℃ 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 0.7 Ta=25℃ 0.6 ID=250uA 0.5 0.4 0.3 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.2 1.4 0.2 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) E,Aug,2015 SOT-723 Package Outline Dimensions Dimensions In Millimeters Min. Max. 0.430 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.080 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. Symbol A A1 b b1 c D E E1 e θ Dimensions In Inches Min. Max. 0.017 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.003 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. SOT-723 Suggested Pad Layout www.cj-elec.com 4 E,Aug,2015 SOT-723 Tape and Reel www.cj-elec.com 5 E,Aug,2015